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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 電機工程學系所 > 依資料類型分類 > 期刊論文 >  A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/126147

標題: A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique
作者: Yang, Ching-Yuan;Chang, Chih-Hsiang;Lin, Jung-Mao;Weng, Jun-Hong
Contributors: 國立中興大學電機工程學系
National Chung Hsing University,Department of Electrical Engineering
Miao-zhen Luo
關鍵字: Back-gate MOS;varied p-n junction capacitance;varied transconductance;voltage-controlled oscillator (VCO)
日期: 2011-3
Issue Date: 2012-10-19 16:20:30 (UTC+8)
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.
摘要: Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 mu m CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset.
Relation: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Volume 21, Issue 3, Page(s) 163-165.
Appears in Collections:[依資料類型分類] 期刊論文

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