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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 電機工程學系所 > 依資料類型分類 > 期刊論文 >  A 20/40-GHz Dual-Band Voltage-Controlled Frequency Source in 0.13-mu m CMOS

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/126148

標題: A 20/40-GHz Dual-Band Voltage-Controlled Frequency Source in 0.13-mu m CMOS
作者: Yang, Ching-Yuan;Chang, Chih-Hsiang;Lin, Jung-Mao;Chang, Hsuan-Yu
Contributors: 國立中興大學電機工程學系
National Chung Hsing University,Department of Electrical Engineering
Miao-zhen Luo
關鍵字: Frequency doubler;fundamental rejection (FR);mutual negative resistance;voltage-controlled oscillator (VCO)
日期: 2011-8
Issue Date: 2012-10-19 16:20:32 (UTC+8)
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC.
摘要: An LC-type voltage-controlled oscillator (VCO) and a push-push frequency doubler are presented for 20/40-GHz dual-band design in standard 0.13-mu m CMOS. Combining the varactor with the transconductance-tuned regime, the VCO is realized to arrive at the range extension for high-frequency operation. In addition, a technique using sensitivity distribution is adopted to achieve linear tuning range. The VCO provides the tuning range of 19.8-22.6 GHz, and the measured phase noise at 21.2-GHz frequency is -105.7 dBc/Hz at a 1-MHz offset. The doubler following the VCO can provide twice the frequency over the tuning range and generate output with better fundamental rejection resulting from the notch characteristic. The measured phase noise of the doubler at 42.4-GHz frequency is -94.6 dBc/Hz at a 1-MHz offset while dissipating 8 mW in the whole circuit.
Relation: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Volume 59, Issue 8, Page(s) 2008-2016.
Appears in Collections:[依資料類型分類] 期刊論文

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