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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 工學院 > 依資料類型分類 > 期刊論文 >  Characterization and optoelectronic properties of p-type N-doped CuAlO2 films

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/128576

標題: Characterization and optoelectronic properties of p-type N-doped CuAlO2 films
作者: Yu, R.S.;Liang, S.C.;Lu, C.J.;Tasi, D.C.;Shieu, F.S.
薛富盛
關鍵字: chemical-vapor-deposition;thin-films;band-gap
日期: 2007
Issue Date: 2012-12-07 14:54:38 (UTC+8)
關連: Applied Physics Letters, Volume 90, Issue 19.
摘要: This letter reports a technique for increasing the carrier concentration and the conductivity of the p-type CuAlO2 through doping the material with nitrogen. The x-ray photoelectron spectroscopy and the optical band gap analyses suggested that the nitrogen atoms occupying the interstitial sites of the delafossite structure provided the p-type CuAlO2 with an impurity energy level in the energy gap. It was also found that the N-doped CuAlO2 film had its optimum conduction properties when the dopant level reached 1.1 at. %. Here, the carrier concentration was raised from 4.81x10(16) in the undoped film to 2.13x10(17) cm(-3) in the doped film, and the corresponding film's conductivity was increased from 3.8x10(-2) to 5.4x10(-2) (Omega cm)(-1), as compared with the undoped CuAlO2 film. (C) 2007 American Institute of Physics.
Relation: Applied Physics Letters
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 薛富盛

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