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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 工學院 > 依資料類型分類 > 期刊論文 >  Anisotropic relaxation Behavior of Compressive residual stress in delafossite CuAlO2

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/128610

標題: Anisotropic relaxation Behavior of Compressive residual stress in delafossite CuAlO2
作者: Yu, R.S.;Tasi, D.C.;Chu, R.S.;Huang, C.J.;Shieu, F.S.
關鍵字: chemical-vapor-deposition;thin-films;electronic-structure;oxides;srcu2o2;cugao2
日期: 2007
Issue Date: 2012-12-07 14:56:34 (UTC+8)
關連: Journal of the Electrochemical Society, Volume 154, Issue 12, Page(s) H1014-H1017.
摘要: The anisotropic relaxation behavior of the compressive residual stress of delafossite CuAlO2 film was identified to take place on silicon substrate, on which the film was grown. Experimental results suggest that in order to release the internal compressive residual stress of the CuAlO2 film, CuO hillocks would be favored to grow on the film surface. It was also proposed that because of the structural anisotropic nature associated with the delafossite CuAlO2, the compressive residual stress was released first by breaking the O-Cu-O bonds of the dumbbell layers and subsequently by the diffusion of Cu and O atoms along the a- axis direction on the close-packed Cu layers, suggesting that the c-axis direction across the AlO6 octahedral layers has a greater resistance to compressive residual stress. (c) 2007 The Electrochemical Society.
Relation: Journal of the Electrochemical Society
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 薛富盛

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