English  |  正體中文  |  简体中文  |  Items with full text/Total items : 43312/67235
Visitors : 2168185      Online Users : 19
RC Version 5.0 © Powered By DSPACE, MIT. Enhanced by NTU/NCHU Library IR team.
National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 工學院 > 依資料類型分類 > 期刊論文 >  Diffusion barrier performance of TiVCr alloy film in Cu metallization

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/128655

標題: Diffusion barrier performance of TiVCr alloy film in Cu metallization
作者: Tsai, D.C.;Huang, Y.L.;Lin, S.R.;Jung, D.R.;Chang, S.Y.;Shieu, F.S.
日期: 2011
Issue Date: 2012-12-07 14:57:39 (UTC+8)
關連: Applied Surface Science, Volume 257, Issue 11, Page(s) 4923-4927.
摘要: In this study, 15 nm-thick sputter-deposited TiVCr alloy thin films were developed as diffusion barrier layers for Cu interconnects. The TiVCr alloy film tends to form a solid solution and a simple crystal structure from the constituted elements. Under TEM, the 15 nm-thick as-deposited TiVCr alloy film was observed to have a dense semi-amorphous or nanocrystalline structure. In conjunction with X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy analyses, the Si/TiVCr/Cu film stack remained stable at a high temperature of 700 degrees C for 30 min. The electrical resistance of Si/TiVCr/Cu film stack remained as low as the as-deposited value. These indicated that the mixed TiVCr refractory elements' alloy barrier layer is very beneficial to prevent Cu diffusion. (C) 2011 Elsevier B.V. All rights reserved.
Relation: Applied Surface Science
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 張守一
[依教師分類] 薛富盛

loading Web of Knowledge data....

Files in This Item:

File SizeFormat






聯絡網站維護人員:wyhuang@nchu.edu.tw,04-22840290 # 412。

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU/NCHU Library IR team Copyright ©   - Feedback