English  |  正體中文  |  简体中文  |  Items with full text/Total items : 43312/67235
Visitors : 2149148      Online Users : 4
RC Version 5.0 © Powered By DSPACE, MIT. Enhanced by NTU/NCHU Library IR team.

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/131590

標題: Anodic Aluminum Oxide Diodes
作者: Chang, C.Y.;Wang, G.J.
關鍵字: fabrication;template;arrays
日期: 2011
Issue Date: 2012-12-07 16:28:57 (UTC+8)
關連: Japanese Journal of Applied Physics, Volume 50, Issue 7.
摘要: During anodic oxidation of aluminum, the incorporated anion species from the electrolyte are drawn into the growing barrier layer at the pore base by the high electric field and, afterward, migrate inward. The barrier layer consists of acid anion-contaminated regions adjacent to the oxide/electrolyte interface and relatively pure alumina further away from it. It can be presumed that there is a depletion layer region in between the acid anion-contaminated material and the pure alumina material. This study investigates the diode characteristics of the anodic aluminum oxide (AAO) film based on the depletion layer region presumption. Different electrolyte acids are employed to fabricate AAO diodes which possess different electrical properties. The current-voltage (I-V) characteristic curves indicate that the AAO devices possess the electrical property of a diode, especially the sulfuric acid processed AAO. It was observed that the threshold voltages for the sulfuric acid, oxalic acid, and phosphoric acid are 3.3, 8, and 16 V, respectively. This fits in with the sequential order presumption of the p, n depletion layer thicknesses for these three electrolyte acids. (C) 2011 The Japan Society of Applied Physics
Relation: Japanese Journal of Applied Physics
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 王國禎
[依教師分類] 王國禎

loading Web of Knowledge data....

Files in This Item:

File SizeFormat






聯絡網站維護人員:wyhuang@nchu.edu.tw,04-22840290 # 412。

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU/NCHU Library IR team Copyright ©   - Feedback