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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 光電工程研究所 > 依資料類型分類 > 期刊論文 >  Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical Strain

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/131678

標題: Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical Strain
作者: Lee, M.H.;Chang, S.T.;Hsieh, B.F.;Huang, J.J.;Lee, C.C.
關鍵字: Flexible;Mechanical Strain;Nano-Crystalline Silicon;Gap State Density;thin-film transistors;amorphous-silicon
日期: 2011
Issue Date: 2012-12-07 16:30:31 (UTC+8)
關連: Journal of Nanoscience and Nanotechnology, Volume 11, Issue 12, Page(s) 10485-10488.
摘要: The gap state density of nano-crystalline silicon active layers on a flexible substrate was redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. We conclude that the gap state density with TOAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.
Relation: Journal of Nanoscience and Nanotechnology
Appears in Collections:[依教師分類] 張書通
[依資料類型分類] 期刊論文
[依教師分類] 張書通

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