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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 光電工程研究所 > 依資料類型分類 > 期刊論文 >  Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/131684

標題: Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering
作者: Chang, S.T.;Liao, M.H.;Lee, C.C.;Huang, J.K.;Wang, W.C.;Hsieh, B.F.
張書通
關鍵字: ballistic transport;charge injection;CMOS integrated circuits;etching;Ge-Si alloys;MOSFET;nanoelectronics;inversion-layers;mobility;source/drain;transistors;mosfets;channel
日期: 2009
Issue Date: 2012-12-07 16:30:39 (UTC+8)
關連: Journal of Vacuum Science & Technology B, Volume 27, Issue 3, Page(s) 1261-1266.
摘要: The authors present stress distribution simulation characterization of the three-dimensional boundary effects and show how these effects can impact the achievable transistor performance gain. The high-performance complementary metal-oxide-semiconductor (CMOS) device has been achieved by stressors such as contact etch stop layer (CESL) and SiGe S/D and optimal geometric structure design. The biaxial-like stress distribution resulting from symmetry structure and uniaxial-like stress distribution resulting from asymmetry structure seems to be promising when considering drive current enhancement, the ballistic efficiency, and carrier injection velocity for CMOS devices. The comprehensive study helps the future nanoscale CMOS device design and demonstrates that the stress enhancement factors remain valid for future technology.
Relation: Journal of Vacuum Science & Technology B
Appears in Collections:[依教師分類] 張書通
[依資料類型分類] 期刊論文
[依教師分類] 張書通

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