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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 光電工程研究所 > 依資料類型分類 > 期刊論文 >  3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/131689

標題: 3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL
作者: Wang, W.C.;Chang, S.T.;Huang, J.;Kuang, S.J.
張書通
關鍵字: Silicon-carbon alloy;Stress;Mobility;MOSFET;band-structure;mobility
日期: 2009
Issue Date: 2012-12-07 16:30:45 (UTC+8)
關連: Solid-State Electronics, Volume 53, Issue 8, Page(s) 880-887.
摘要: Stress distributions in the Si channel regions of silicon-based alloy source/drain and stressed silicon nitride liner NMOSFETs with various widths were studied using 3D TCAD simulations. For strained Si NMOS, drive current enhancement was found to be dominated by tensile stress along the transport direction (S(xx)), and compressive stress along the growth direction (S(zz)) in larger width devices. Stress along the width (S(yy)) was found to have the least effect on the drain current in the large width regime. The compressive stress along the vertical direction, perpendicular to the gate oxide (S(zz)), contributes significantly to drive current enhancement and cannot be neglected in NMOSFETs. For strained Si PMOS, it is found that S(xx) contributes most substantially to the improvement in drive current, while S(zz) contributes the least. In the narrow width regime S(yy) noticeably enhances drive current, contributing almost a quarter of the total gain. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
Relation: Solid-State Electronics
Appears in Collections:[依教師分類] 張書通
[依資料類型分類] 期刊論文
[依教師分類] 張書通

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