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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 光電工程研究所 > 依資料類型分類 > 期刊論文 >  Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/131713

標題: Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory
作者: Chang, C.C.;Pei, Z.W.;Chan, Y.J.
裴靜偉
關鍵字: field-effect transistors;gate electret
日期: 2008
Issue Date: 2012-12-07 16:31:15 (UTC+8)
關連: Applied Physics Letters, Volume 93, Issue 14.
摘要: In this letter, an organic nonvolatile thin film transistor (TFT) memory on a plastic substrate is reported. The cross-linked poly-4-vinyl phenol (PVP) is used as a polymer dielectric layer in the form of a triple layer structure to achieve the memory function. Two interfaces between the PVP triple layers are the main trapping centers for electrons and holes, respectively, which are verified by the capacitance-voltage analysis. The electric dipole is established by the separated electrons and holes in the two interfaces of the PVP triple layer structure and results in an 11 V memory window for the TFT nonvolatile memory. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2996260]
Relation: Applied Physics Letters
Appears in Collections:[依教師分類] 裴靜偉
[依教師分類] 裴靜偉
[依資料類型分類] 期刊論文
[依教師分類] 裴靜偉

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