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National Chung Hsing University Institutional Repository - NCHUIR > 理學院 > 奈米科學研究所 > 依資料類型分類 > 期刊論文 >  Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/132502

標題: Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots
作者: Shih, C.I.;Lin, C.H.;Lin, S.C.;Lin, T.C.;Sun, K.W.;Voskoboynikov, O.;Lee, C.P.;Suen, Y.W.
日期: 2011
Issue Date: 2012-12-07 17:02:07 (UTC+8)
關連: Nanoscale Research Letters, Volume 6.
摘要: In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states) on photoluminescence excitation (PLE) spectra of InAs quantum dots (QDs) was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T) were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA) phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.
Relation: Nanoscale Research Letters
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 孫允武
[依教師分類] 孫允武
[依教師分類] 孫允武

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