English  |  正體中文  |  简体中文  |  Items with full text/Total items : 43312/67235
Visitors : 2149801      Online Users : 5
RC Version 5.0 © Powered By DSPACE, MIT. Enhanced by NTU/NCHU Library IR team.
National Chung Hsing University Institutional Repository - NCHUIR > 理學院 > 奈米科學研究所 > 依資料類型分類 > 期刊論文 >  Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/132503

標題: Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control
作者: Chiu, C.W.;Liao, T.W.;Tsai, K.Y.;Wang, F.M.;Suen, Y.W.;Kuan, C.H.
關鍵字: raman-scattering;germanium;electroluminescence;photoluminescence;oxidation;growth;layer
日期: 2011
Issue Date: 2012-12-07 17:02:09 (UTC+8)
關連: Nanotechnology, Volume 22, Issue 27.
摘要: The local melting point of a Ge thin film can be controlled by a hole-array pattern on the host Si substrate due to the variations in the stress distribution and the surface morphology induced by the pattern. A simple annealing process is developed from this effect to produce Ge NCs with a single-domain-crystal size over 20 nm, confirmed by transmission electron microscopy and Raman spectroscopy, from an electron-gun-evaporated Ge thin film on the patterned Si substrate. The effect of the dimensions of the hole array is also investigated. Photoluminescence observed around 1157 nm from some of the samples shows the possibility of improving the infrared emission capability by this proposed method.
Relation: Nanotechnology
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 孫允武
[依教師分類] 孫允武
[依教師分類] 孫允武

loading Web of Knowledge data....

Files in This Item:

File SizeFormat






聯絡網站維護人員:wyhuang@nchu.edu.tw,04-22840290 # 412。

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU/NCHU Library IR team Copyright ©   - Feedback