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National Chung Hsing University Institutional Repository - NCHUIR > 理學院 > 物理學系所 > 依資料類型分類 > 期刊論文 >  Comparison of the performance of InGaN/AlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/132652

標題: Comparison of the performance of InGaN/AlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates
作者: Liao, W.T.;Gong, J.R.;Wang, C.L.;Wang, W.L.;Tsuei, C.C.;Lee, C.Y.;Chen, K.C.;Ho, J.R.;Luo, R.C.
龔志榮
關鍵字: light-emitting-diodes;molecular-beam epitaxy;laser-diodes;thin-films;gan;dislocations;layers;algan
日期: 2007
Issue Date: 2012-12-14 09:11:41 (UTC+8)
關連: Electrochemical and Solid State Letters, Volume 10, Issue 1, Page(s) H5-H7.
摘要: We report a comparative study on the performance of InGaN/AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) fabricated on c- and a-plane sapphire substrates, respectively. It was found that the LEDs grown on a-plane sapphire substrates exhibited enhanced electroluminescence intensity, decreased double crystal X-ray diffraction linewidth, reduced etching pit density, and smaller ideality factor compared to those deposited on c- plane sapphire substrates. The improved LED characteristics are attributed to threading dislocation density decrement inside the LEDs due to the reduced mismatch between LED structure and a-plane sapphire substrate. (c) 2006 The Electrochemical Society.
Relation: Electrochemical and Solid State Letters
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 龔志榮
[依教師分類] 龔志榮

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