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National Chung Hsing University Institutional Repository - NCHUIR > 理學院 > 物理學系所 > 依資料類型分類 > 期刊論文 >  Characteristics and interactions of threading dislocations in GaN films grown on (0001) sapphire substrates with or without short-period superlattice insertion

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/132654

標題: Characteristics and interactions of threading dislocations in GaN films grown on (0001) sapphire substrates with or without short-period superlattice insertion
作者: Wang, W.L.;Gong, J.R.;Wang, C.L.;Liao, W.T.;He, J.L.;Chi, Y.C.;Shi, J.B.
龔志榮
關鍵字: GaN;threading dislocations;defect analyses;chemical-vapor-deposition;optical-properties;phase epitaxy;layers;algan;relaxation;density;diodes;aln
日期: 2006
Issue Date: 2012-12-14 09:11:46 (UTC+8)
關連: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 9A, Page(s) 6888-6892.
摘要: In this study, transmission electron microscopy was employed to investigate the characteristics of threading dislocations (TDs) in GaN films grown on the (0001) sapphire substrates with or without the insertion of Al0.3Ga0.7N (2 nm)/GaN (2 nm) short period superlattices (SPSLs). By using g (.) b = 0 invisibility criterion, it was found that most of the TDs were type a TDs in a GaN film either containing SPSL or having no SPSL insertion. Type a + c TDs were found to nucleate through the interactions between type a and type c TDs in GaN near the GaN/sapphire interface. Some of the type a TDs were observed to bend along GaN basal plane because of the influence of biaxial strain near the GaN/SPSL interface.
Relation: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 龔志榮
[依教師分類] 龔志榮

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