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標題: 90 nm TCAM cell design with leakage suppression technique
作者: Chang, Y.J.
日期: 2009
Issue Date: 2012-12-14 10:38:59 (UTC+8)
關連: Electronics Letters, Volume 45, Issue 6, Page(s) 300-301.
摘要: A leakage suppressed ternary content-addressable memory (TCAM) cell design is introduced, in which 'don't care' information is used to minimise the leakage power dissipated in the prefix CAM. The measurements based on 90 nm process technology show that without any performance penalty the design can deliver a leakage power reduction of 18%.
Relation: Electronics Letters
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 張延任
[依教師分類] 張延任

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