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National Chung Hsing University Institutional Repository - NCHUIR > 工學院 > 精密工程研究所 > 依資料類型分類 > 期刊論文 >  Demonstration of InGaN Light-Emitting Diodes by Incorporating a Self-Textured Oxide Mask Structure

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/135020

標題: Demonstration of InGaN Light-Emitting Diodes by Incorporating a Self-Textured Oxide Mask Structure
作者: Lin, W.Y.;Wuu, D.S.;Huang, S.C.;Lo, S.Y.;Liu, C.M.;Horng, R.H.
關鍵字: Fabry-Perot;InGaN;light-emitting diode (LED);oxide;wet etching process;efficiency
日期: 2011
Issue Date: 2012-12-14 11:34:17 (UTC+8)
關連: Ieee Photonics Technology Letters, Volume 23, Issue 17, Page(s) 1240-1242.
摘要: A 460-nm InGaN light-emitting diode (LED) with a self-textured oxide mask (STOM) array structure upon an additional low-temperature GaN interlayer is demonstrated. As compared with a conventional LED, the electroluminescence (EL) spectrum of an STOM-LED displays a manifest peak profile without Fabry-Perot interference fringes, one-fold increment in EL intensity, and 43% enhancement in total output power at an injection current of 20 mA. High-density light-emitting dots across the STOM-LED surface are discovered at a small injection current of 20 A because the STOM array can act as scattering centers to enhance the light extraction.
Relation: Ieee Photonics Technology Letters
Appears in Collections:[依資料類型分類] 期刊論文
[依教師分類] 武東星
[依教師分類] 洪瑞華
[依教師分類] 武東星
[依教師分類] 武東星
[依教師分類] 洪瑞華

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