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National Chung Hsing University Institutional Repository - NCHUIR > 中興大學 > 期刊論文 >  A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/139474

標題: A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
作者: Meng, C.C.;Chiang, M.H.;Wu, T.H.
關鍵字: CMOS;LNA;MOSFET amplifier
日期: 2003
Issue Date: 2012-12-14 15:21:30 (UTC+8)
關連: Microwave and Optical Technology Letters, Volume 36, Issue 2, Page(s) 136-139.
摘要: A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc.
Relation: Microwave and Optical Technology Letters
Appears in Collections:[中興大學] 期刊論文

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