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National Chung Hsing University Institutional Repository - NCHUIR > 理學院 > 物理學系所 > 依資料類型分類 > 碩博士論文 >  連續離子沉積法製備AgBiS2量子點的合成與特性及敏化太陽能電池應用

Please use this identifier to cite or link to this item: http://nchuir.lib.nchu.edu.tw/handle/309270000/153125

標題: 連續離子沉積法製備AgBiS2量子點的合成與特性及敏化太陽能電池應用
Synthesis and Characterization of AgBiS2 Quantum Dots by the Successive Ionic Layer Adsorption and Reaction method for application for sensitized solar cell
作者: 黃本吉
Huang, Pen-Chi
Contributors: 李明威
物理學系所
關鍵字: 銀铋硫;連續離子沉積;量子點
sensitized solar cell;AgBiS2;SILAR;quantum dot
日期: 2013
Issue Date: 2013-11-18 13:45:08 (UTC+8)
Publisher: 物理學系所
摘要: 本研究以半導體材料AgBiS2作為染料太陽能電池中的染料吸光劑。因此採用半導體量子點取代染料吸光劑是本研究的重點。本研究使用連續離子沉積反應法合成Ag2S與Bi2S3量子點到TiO2工作區內,再進行退火100℃使其形成AgBiS2量子點,形成太陽能電池的光電極再進行組裝成為太陽能電池。本研究也以X-ray繞射、穿透式電子顯微鏡與吸收光譜來探討AgBiS2量子點的晶格結構與光學特性。並對AgBiS2量子點太陽能電池進行外部量子效率量測其效率。本實驗使用TiO2緻密層、多硫電解液、Au為對電極達到轉換率0.529%、短路電流密度7.61 mA、開路電壓0.18V、填充因子 38.6%。外部量子效率量測可在600nm得到最大轉換效率30%。
AgBiS2 quantum dots were produced using successive ionic layer adsorption and reaction (SILAR) of Bi(NO3)3, Ag(NO3) and Na2S. The quantum dots were synthesized on a nanoporous TiO2 electrode. To improve efficiency, passivation treatments including a TiO2 under layer and additional treatments including annealing and an Au counter-electrode were used. The crystallinity and morphology were characterized by X-ray diffraction and transmission electron microscopy. The optical properties of the AgBiS2 quantum dots were characterized by UV-vis spectroscopy. Polysulfide was used as the electrolyte. The best cell yields a short-circuit current of 7.61 mA/cm2, an open circuit voltage of 0.18V, a fill factor of 38.6% and a power conversion efficiency of 0.529 % at one sun.
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