本研究以半導體材料AgBiS2作為染料太陽能電池中的染料吸光劑。因此採用半導體量子點取代染料吸光劑是本研究的重點。本研究使用連續離子沉積反應法合成Ag2S與Bi2S3量子點到TiO2工作區內，再進行退火100℃使其形成AgBiS2量子點，形成太陽能電池的光電極再進行組裝成為太陽能電池。本研究也以X-ray繞射、穿透式電子顯微鏡與吸收光譜來探討AgBiS2量子點的晶格結構與光學特性。並對AgBiS2量子點太陽能電池進行外部量子效率量測其效率。本實驗使用TiO2緻密層、多硫電解液、Au為對電極達到轉換率0.529%、短路電流密度7.61 mA、開路電壓0.18V、填充因子 38.6%。外部量子效率量測可在600nm得到最大轉換效率30%。 AgBiS2 quantum dots were produced using successive ionic layer adsorption and reaction (SILAR) of Bi(NO3)3, Ag(NO3) and Na2S. The quantum dots were synthesized on a nanoporous TiO2 electrode. To improve efficiency, passivation treatments including a TiO2 under layer and additional treatments including annealing and an Au counter-electrode were used. The crystallinity and morphology were characterized by X-ray diffraction and transmission electron microscopy. The optical properties of the AgBiS2 quantum dots were characterized by UV-vis spectroscopy. Polysulfide was used as the electrolyte. The best cell yields a short-circuit current of 7.61 mA/cm2, an open circuit voltage of 0.18V, a fill factor of 38.6% and a power conversion efficiency of 0.529 % at one sun.